Samsung 990 EVO 1TB NVMe M.2 SSD (MZ-V9E1TOBW)

Speed that stays ahead

The 990 EVO offers enhanced sequential read/write speeds up to 5,000/4,200 MB/s, and random read/write speeds up to 700K/800K IOPS, reaching up to 43% faster than the 970 EVO Plus 2TB2. Wait less for games and access big files quick.

Evolved power efficiency

Turn right on and stay on. With a remarkable 70% improvement in power efficiency over the previous model3, compute for longer without worrying about battery life. Plus, it supports Modern Standby, letting you stay connected to the internet and still receive notifications even in the low-power state.

Smart thermal solution

The 990 EVO's heat spreader label helps thermal control of the NAND chip. Samsung's cutting-edge thermal control algorithm, paired with Dynamic Thermal Guard, ensures both consistent and reliable performance. Keep your performance red-hot, not your drive

Samsung Magician software

Make your SSD works like magic. Samsung Magician software's optimisation tools ensure the best SSD performance4. It's easy to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.

Bringing innovations to life

For decades, Samsung’s NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation

Specifications

Application : Client PCs

Rated Capacity : 1,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

Form Factor : M.2 (2280)

Interface : PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0

Dimension (WxHxD) : 80 x 22 x 2.38 mm

Weight : Max 9.0g Weight

Storage Memory : Samsung V-NAND TLC

Controller : Samsung in-house Controller

Cache Memory : HMB(Host Memory Buffer)

Performance

Sequential Read : Up to 5,000 MB/s * Performance may vary based on system hardware & configuration

Sequential Write : Up to 4,200 MB/s * Performance may vary based on system hardware & configuration

Random Read (4KB, QD32) : Up to 680,000 IOPS * Performance may vary based on system hardware & configuration

Random Write (4KB, QD32) : Up to 800,000 IOPS * Performance may vary based on system hardware & configuration

Random Read (4KB, QD1) : Up to 20,000 IOPS * Performance may vary based on system hardware & configuration

Random Write (4KB, QD1) : Up to 90,000 IOPS * Performance may vary based on system hardware & configuration

Environment

Average Power Consumption (system level) : Average: Read 4.9 W / Write 4.5 W* Actual power consumption may vary depending on system hardware & configuration

Power consumption (Idle) : Typical 60 mW * Actual power consumption may vary depending on system hardware & configuration

Power Consumption (Device Sleep) : Typical 5 mW * Actual power consumption may vary depending on system hardware & configuration

Allowable Voltage : 3.3 V ± 5 % Allowable voltage

Reliability (MTBF) : 1.5 Million Hours Reliability (MTBF)

Operating Temperature : 0 - 70 ℃ Operating Temperature

Shock ; 1,500 G & 0.5 ms (Half sine)

Warranty

5-year Limited Warrantyor 600 TBW Limited Warranty